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2SK1519, 2SK1520
Silicon N Channel MOS FET
REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D G
1. Gate 2. Drain 3. Source
1
S 2 3
Rev.3.00 Apr 27, 2006 page 1 of 6
2SK1519, 2SK1520
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage 2SK1519 2SK1520 Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 450 500 30 30 120 30 200 150 -55 to +150 Unit V V A A A W
Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage 2SK1519 2SK1520 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1519 current 2SK1520 Gate to source cutoff voltage Static drain to source on 2SK1519 state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 30 -- -- 2.0 -- -- 15 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.12 25 5800 1550 170 65 170 415 200 1.1 120 Max -- -- 10 250 3.0 0.15 0.16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *3 ID = 15 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2
IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s
Rev.3.00 Apr 27, 2006 page 2 of 6
2SK1519, 2SK1520
Main Characteristics
Power vs. Temperature Derating
300
Maximum Safe Operation Area
1,000 300
a are 10 his (on) t in DS 10 s 0 ion by R P t s W era ed 1 m = Op limit DC 10 s is Op ms er (1 ati Sh on ot) (T C= 25 C )
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10 3 1 0.3
200
100
Ta = 25C 0.1
0 50 100 150
2SK1519 2SK1520 30 100 300 1,000
1
3
10
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 6V 10 V 5V Pulse Test 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
40
40
30 4.5 V 20
30
20 TC = 75C 25C -25C
10
VGS = 4 V
10
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test 8 ID = 50 A
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test 2 1 0.5
Drain to Source Saturation Voltage VDS (on) (V)
6
4 20 A 2 10 A
Static Drain to Source on State Resistance RDS (on) ()
0.2 0.1 0.05 2 5 10 20 50 100 200 VGS = 10 V, 15 V
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Apr 27, 2006 page 3 of 6
2SK1519, 2SK1520
Static Drain to Source on State Resistance vs. Temperature
0.5 VGS = 10 V Pulse Test ID = 50 A 0.3 20 A
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
100 50 VDS = 10 V Pulse Test TC = -25C 25C 75C
0.4
20 10 5
0.2 10 A 0.1
2 1 0.5
0 -40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1,000 10,000 di/dt = 100 A/s, VGS = 0 Pulse Test
Capacitance C (pF)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Ciss
Reverse Recovery Time t rr (ns)
500
200 100 50
1,000 Coss
100 Crss VGS = 0 f = 1 MHz 10
20 10 0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
1,000 VDD = 100 V 250 V 400 V VGS VDS
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1,000 500 td (off)
Switching Time t (ns)
800
16
600
12
200 100 50 tr
tf
400
8
td (on)
200
VDD = 400 V 250 V 100 V 80 160 240
ID = 30 A Pulse Test 320 400
4
20 10 0.5
VGS = 10 V, PW = 2 s . duty < 1%, VDD = 30 V . 1 2 5 10 20 50
0 0
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Apr 27, 2006 page 4 of 6
2SK1519, 2SK1520
Reverse Drain Current vs. Source to Drain Voltage
50
Reverse Drain Current IDR (A)
Pulse Test 40
30
20 10 VGS = 0, -5 V
10 V
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 TC = 25C 1 D=1 0.5 0.3 0.2
0.1
0.1
0.05
ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM PW D = PW T
0.02
0.03
0.01 ulse ot P 1 Sh
T 100 1m 10 m 100 m
0.01 10
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor D.U.T
Vin 10% 10% 90% td (on) tr 90% td (off) 10%
RL
50 Vin 10 V VDD . = 30 V .
Vout
tf
Rev.3.00 Apr 27, 2006 page 5 of 6
2SK1519, 2SK1520
Package Dimensions
Package Name TO-3PL JEITA Package Code RENESAS Code PRSS0004ZF-A Previous Code TO-3PL / TO-3PLV MASS[Typ.] 9.9g
Unit: mm
6.0 0.2
20.0 0.3 3.3 0.2
5.0 0.2
26.0 0.3
20.0 0.6 2.5 0.3
1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2
5.45 0.5
3.8 7.4
Ordering Information
Part Name 2SK1519-E 2SK1520-E Quantity 360 pcs 360 pcs Box (Tube) Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Apr 27, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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